808nm Laser Diode K81S06F-2.00W
Specifications
- Origin
- Beijing China(Mainland)
- Price Term
- FOB
808nm Laser Diode K81S06F-2.00W is a Potentiometers product. Key specs — Origin: Beijing China(Mainland); Price Term: FOB.
Product Description
Certification:ISO9001
Key Features 808nm Laser Diode K81S06F-2.00W：
2W output power 105µm or 200µm fiber core diameter 0.22NA 808nm wavelengthApplications 808nm Laser Diode K81S06F-2.00W：
Laser pumping Medical use Printing Heating Material processing Markingpecifications（25℃） | Symbol | Unit | K81S06F-2.00W | K81S06F-5.00W | |
Optical data | CW-output power | Po | W | 2 | 5 |
Center wavelength | lc | nm | 808 | ||
Tolerance of l | - | nm | ±3,±10 | ||
Spectral width (FWHM) | △l | nm | <3 | ||
Temperature drift of l | - | nm/℃ | ~0.3 | ||
Fiber data(1) | Fiber core diameter | Wc | µm | 105, 200 | |
Numerical aperture | NA | - | 0.22 | ||
Fiber connector | - | - | FC, ST, SMA-905 | ||
Electrical data | Operation current | Iop | A | 2.5 | 6.0 |
Threshold current | Ith | A | 0.4 | 0.7 | |
Conversion efficiency | η | % | 30~40 | ||
Slope efficiency | ηD | W/A | 0.7~1.0 | ||
Operation voltage | Vop | V | 1.9 | 2.1 | |
Reverse voltage | Vre | V | 2 | ||
PD data | Current | Imo | mA | 0.2~1.0 | |
Others | Operation temperature | Top | ℃ | 10~30 | |
Storage temperature | Tst | ℃ | -20~+80 | ||
Expected lifetime | MTBF | h | >10,000 | ||
Dimensions (fiber and connector not included) | - | mm | 26.0×12.7×12.5 | ||
