808nm Laser Diode K81S14F-2.00W
Listing ID#10051370
ModelK81S14F-2.00W
CategoryThyristors

808nm Laser Diode K81S14F-2.00W

Specifications

Origin
Beijing China(Mainland)
Price Term
FOB
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Quick answer

808nm Laser Diode K81S14F-2.00W is a Thyristors product. Key specs — Origin: Beijing China(Mainland); Price Term: FOB.

Product Description

Delivery Time:4-8weeks
Certification:ISO9001

Key Features 808nm Laser Diode K81S14F-2.00W:

2W output power 105µm fiber core diameter 0.22NA 808nm wavelength

Applications 808nm Laser Diode K81S14F-2.00W:

Laser pumping Medical use Printing Heating Material processing Marking

Specifications(25℃)

Symbol

Unit

K81S14F-2.00W

Optical data

CW-output power

Po

W

2

Center wavelength

lc

nm

808

Tolerance of l

-

nm

±3,±10

Spectral width (FWHM)

△l

nm

<3

Temperature drift of l

-

nm/℃

~0.3

Fiber data (1)

Fiber core diameter

Wc

µm

105

Numerical aperture

NA

-

0.22

Fiber connector

-

-

FC, ST, SMA-905

Electrical data

Operation current

Iop

A

2.5

Threshold current

Ith

A

0.4

Conversion efficiency

η

%

45

Slope efficiency

ηD

W/A

0.9

Operation voltage

Vop

V

1.9

Reverse voltage

Vre

V

2

PD data

Current

Imo

mA

0.2~1.0

TEC data

Max. current

It

A

2

Max. voltage

Vt

V

3.8

Thermistor data(2)

Thermistor

Rt

(K Ω)/β(25℃)

10±5%/3477

Other

Operation temperature

Top

℃

10~30

Storage temperature

Tst

℃

-20~+80

Expected lifetime

MTBF

h

>10,000

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