808nm Laser Diode K81S14F-2.00W
Specifications
- Origin
- Beijing China(Mainland)
- Price Term
- FOB
808nm Laser Diode K81S14F-2.00W is a Thyristors product. Key specs — Origin: Beijing China(Mainland); Price Term: FOB.
Product Description
Certification:ISO9001
Key Features 808nm Laser Diode K81S14F-2.00W:
2W output power 105µm fiber core diameter 0.22NA 808nm wavelengthApplications 808nm Laser Diode K81S14F-2.00W:
Laser pumping Medical use Printing Heating Material processing MarkingSpecifications(25℃) | Symbol | Unit | K81S14F-2.00W | |
| Optical data | CW-output power | Po | W | 2 |
Center wavelength | lc | nm | 808 | |
Tolerance of l | - | nm | ±3,±10 | |
Spectral width (FWHM) | △l | nm | <3 | |
Temperature drift of l | - | nm/℃ | ~0.3 | |
Fiber data (1) | Fiber core diameter | Wc | µm | 105 |
Numerical aperture | NA | - | 0.22 | |
Fiber connector | - | - | FC, ST, SMA-905 | |
Electrical data | Operation current | Iop | A | 2.5 |
Threshold current | Ith | A | 0.4 | |
Conversion efficiency | η | % | 45 | |
Slope efficiency | ηD | W/A | 0.9 | |
Operation voltage | Vop | V | 1.9 | |
Reverse voltage | Vre | V | 2 | |
| PD data | Current | Imo | mA | 0.2~1.0 |
TEC data | Max. current | It | A | 2 |
Max. voltage | Vt | V | 3.8 | |
Thermistor data(2) | Thermistor | Rt | (K Ω)/β(25℃) | 10±5%/3477 |
Other | Operation temperature | Top | ℃ | 10~30 |
Storage temperature | Tst | ℃ | -20~+80 | |
Expected lifetime | MTBF | h | >10,000 | |
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